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Stacking-fault energy
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Stacking-fault energy : ウィキペディア英語版
Stacking-fault energy
The stacking-fault energy (SFE) is a materials property on a very small scale. It is noted as γSFE in units of energy per area. Stacking-fault energy is a primary factor in determining the wear resistance of a metal and, primarily, its resistance to galling.
A stacking fault is an interruption of the normal stacking sequence of a atomic planes in a crystal structure. These interruptions carry a certain stacking-fault energy. The width of stacking fault is a consequence of the balance between the repulsive force between two partial dislocations on one hand and the attractive force due to the surface tension of the stacking fault on the other hand. The equilibrium width is thus partially determined by the stacking-fault energy. When the SFE is high the dissociation of a full dislocation into two partials is energetically unfavorable, and the material deforms only by dislocation glide. Lower SFE materials display wider stacking faults and have more difficulties for cross-slip and climb.
The SFE modifies the ability of a dislocation in a crystal to glide onto an intersecting slip plane. When the SFE is low, the mobility of dislocations in a material decreases.
==Stacking Faults and Stacking Fault Energy==

A stacking fault is an irregularity in the planar stacking sequence of atoms in a crystal – in FCC metals the normal stacking sequence is ABCABC etc., but if a stacking fault is introduced it may introduce an irregularity such as ABCBCABC into the normal stacking sequence. These irregularities carry a certain energy which is called stacking-fault energy.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
ウィキペディアで「Stacking-fault energy」の詳細全文を読む



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